Samsung Electronics recently revealed at its quarterly technical briefing that its 10th generation 1c nanometer process DRAM has entered the ramp up stage of mass production, with initial yield exceeding industry expectations at a critical point. Compared to the previous generation, the new process has optimized the unit capacitor structure and etching accuracy, resulting in an approximately 15% increase in single crystal round bit output. Industry analysis suggests that as AI and high-performance computing continue to amplify the demand for memory bandwidth, the capacity release of advanced process DRAM will effectively alleviate the supply and demand tension in the high-end market. As the core distributor of Samsung's storage product line, Jieke will continue to follow the supply rhythm of the new generation DRAM and provide customers with more stable supply guarantee.