Global Electronic Components Distribution · Since 2007

Global professional agency and distribution of electronic components

Jieke Yazhou Co., Ltd.is a professional distributor of electronic components based in Hong Kong and serving the global market. It represents Samsung's international first-line storage brand and specializes in DRAM, eMMC, consumer grade storage and other products, serving the automotive, IoT, drone and smart life markets.

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Over 17 years in the semiconductor industry · Serving automotive, IoT, drone and more markets

Global professional agency and distribution of electronic components

Our Services

Focused on global electronic components distribution · Professional memory device solutions

Jieke Yazhou Co., Ltd. formerly known as Jieke Communication Technology Co., Ltd., was founded in Shenzhen and Hong Kong in 2007, specializing in the distribution of global electronic components. We act as an agent for Samsung's international first-line storage brand, specializing in dynamic random access memory (DRAM), embedded storage (eMMC), consumer grade storage, and other products widely used in markets such as automotive, IoT, drones, and smart living.

Craftsmanship Innovation Quality Focus After-sales Care

Three Key Advantages

Quality Assurance · Professional Channels · 100% In Stock, creating the best value for you

Quality Assurance

Top-tier brand memory chips / Stable supply · Genuine guaranteed

Professional Channels

Best price channel / Shortest lead time, creating the best value

100% In Stock

Sufficient stock / Fast shipment upon order

Brand Partners

Distributing top international memory brands

Milestones

From Huaqiangbei to a global footprint, 17 years of expertise

2007

Jieke Communication Technology founded

Based in Shenzhen Huaqiangbei, serving domestic phone, USB and mobile storage customers

2015

Jieke (Asia) registered in Hong Kong

Headquarters in Hong Kong, with branches in Shenzhen and Suzhou

Present

17+ Years of Industry Experience

Deep in semiconductors, bridging global suppliers and customers

Global Presence

Hong Kong HQ coordinates, Shenzhen-Suzhou branches work in synergy

Group HQ

Hong Kong HQ

Located in the Hong Kong SAR, coordinating global business and brand partnerships

Source Base

Shenzhen Branch

Based in Huaqiangbei electronics hub, close to manufacturing and supply sources

East China Hub

Suzhou Branch

Serving East China customers with fast regional response

Application Markets

Memory devices empowering diverse smart terminals

01

Network Play Box

02

Mobile and PC

03

AI

04

car

05

Game

06

Internet of Things

07

drone

08

Smart Life

Service Philosophy

Integrity, punctuality, thinking what customers think

原

Original Sourcing · Quality First

Original Sourcing, Quality First

Adhering to first-tier original channels with full-chain quality traceability, ensuring every memory chip is genuine and reliable.

效

Global Layout · Efficient Delivery

Global Layout, Efficient Delivery

Multi-point warehousing network with ample stock, ensuring stable cross-border delivery.

专

Deep Expertise · Tailored Support

Deep Expertise, Tailored Support

Focusing on memory semiconductors, providing tailored selection plans for different industry scenarios.

诚

Integrity Partnership · Sustainable Win-win

Integrity Partnership, Sustainable Win-win

Customer value at the core, building a transparent collaboration system for long-term industry growth.

Product Center

Covering DRAM, memory cards, flash ICs, eMMC and other memory devices

KM4X60002M-B321

KM4X60002M-B321

封装：**254 FBGA** 存储：**32GB eMMC 5.1** 内存：**24Gb LPDDR4X（等效 3GB）** DRAM 速率：**4266 Mbps** 状态：量产 Active，RoHS 无铅

M321RYGA0PB2-CCP

M321RYGA0PB2-CCP

-* * Model * *: DDR5 RDIMM (Server Registered Memory with ECC Error Correction)

KLMDG2RCTE‑B041

KLMDG2RCTE‑B041

M321RAJA0MB2-CCP

M321RAJA0MB2-CCP

- Capacity: 128GB DDR5 RDIMM (Registered ECC hardware error correction) - Frequency: 6400Mbps (PC5-51200), CL52 timing - Architecture: 2Rank ×4 (2Rx4) - Operating Voltage: 1.1V low-voltage energy-saving - Module Composition: (8G×4) ×40 DRAM chips - Pins: 288-Pin Server DIMM - Stability: Supports 2DPC per channel, 24/7 continuous operation in data center

MDRRWM4QDBC2-3G000

MDRRWM4QDBC2-3G000

1. Capacity: 96GB DDR5 RDIMM (REG register, ECC hardware error correction) 2. Frequency: 6400Mbps (PC5-51200), Voltage: 1.1V 3. Architecture: 2Rank ×4 (2Rx4) 4. Pins: 288Pin Server DIMM 5. DRAM Composition: (6G×4)×40 DRAM chips 6. Features: Supports 2DPC (two DIMMs per channel), hardware data error detection and correction, stable 24/7 operation in server environment

M321R8GA0EB2-CCPWF

M321R8GA0EB2-CCPWF

- Capacity: 64GB - Type: DDR5 ECC RDIMM (Registered Error-Correcting Memory) - Frequency: 6400Mbps (PC5-51200), CL52 timing - Architecture: 2Rank ×4 (2Rx4) - Voltage: 1.1V Low Voltage - Pins: 288-Pin Server DIMM

MZTL67T6HBLC-00AW7

MZTL67T6HBLC-00AW7

- Interface: PCIe 5.0 x4 NVMe 2.0 - Form Factor: E1.S 9.5mm thick high-density blade SSD - Capacity: 7.68TB TLC enterprise-grade SSD - Top Performance: Sequential read: 12,000 MB/s, sequential write: 6,800 MB/s Random read: 2 million IOPS, random write: 400,000 IOPS - Endurance: 1 DWPD, 5-year warranty, with PLP hardware power loss protection - MTBF: 2.5 million hours, designed for 24/7 data center operation

MZTL63T8HFLT-00AW7

MZTL63T8HFLT-00AW7

1. **Interface Protocol**: PCIe 5.0 x4 NVMe 2.0 2. **Performance** - Sequential Read: 12,000 MB/s - Sequential Write: 6,800 MB/s - Random Read: 1.7 million IOPS, Random Write: 250,000 IOPS 3. **Endurance**: 1 DWPD, 5-year enterprise-grade write lifespan with PLP power-loss protection 4. **Flash**: Samsung next-gen V-NAND TLC, data center-optimized firmware

MZQL27T6HBLA-00A07

MZQL27T6HBLA-00A07

1. **Series**: Samsung PM9A3 Enterprise Read-Intensive SSD 2. **Specs**: 2.5-inch 7mm thick U.2 (SFF-8639), PCIe 4.0 x4 NVMe 1.4 protocol 3. **Flash**: Samsung 6th Gen V-NAND TLC with PLP hardware power-loss protection 4. **Endurance**: Total writes 14,016 TBW 5. **Performance**: Sequential read 6,800 MB/s, sequential write 4,000 MB/s, random read 1 million IOPS

MZQL23T8HCLS-00A07

MZQL23T8HCLS-00A07

Spec: PM9A3 Enterprise, 2.5-inch U.2 (SFF-8639), PCIe 4.0 NVMe, 3.84TB TLC SSD

K3KL5L50EA-BGCU

K3KL5L50EA-BGCU

- Specification: LPDDR5X DRAM, 128Gbit = single chip **16GB** - Bus Width: x64bit - Speed: Full-speed 8533Mbps high-frequency version - Power Supply: Four-level low voltage of 1.8V / 1.05V / 0.9V / 0.5V - Temperature Range: -25℃ ~ 85℃, Commercial Grade

K3KL5L50CM-BGCW

K3KL5L50CM-BGCW

- Type: Samsung LPDDR5X Ultra-Low-Power Mobile DRAM - Capacity: 128 Gbit = **16GB per chip** - Bus Width: x64bit - Speed: 8533 Mbps High-Frequency Version - Power Supply: Four-level Low Voltage 1.8V / 1.05V / 0.9V / 0.5V - Operating Temperature: -25℃ ~ 85℃ Commercial Grade - Package: FBGA496 - Flash Die: Fifth-generation V-NAND architecture, power-optimized version

K3KL4L40EM-BGCU

K3KL4L40EM-BGCU

- **Model**: Samsung LPDDR5X Ultra-Low Power Mobile DRAM - **Capacity**: 96 Gbit = **12GB per chip** - **Bus Width**: x64bit - **Speed**: 8533 Mbps (commonly referred to in the industry as 8553 Mbps high-frequency version) - **Operating Voltage**: Four low-voltage levels: 1.8V / 1.05V / 0.9V / 0.5V - **Operating Temperature**: -25℃ ~ 85℃ (Commercial Grade) - **Package**: FBGA-496 - **Typical Applications**: Memory expansion for Snapdragon 8 Gen1/Gen2, Dimensity 9000/9200 mobile CPUs, tablets, high-end handheld consoles, and AI computing terminals

K4UHE3S4AA-MGCL

K4UHE3S4AA-MGCL

1. **Type**: Samsung LPDDR4X Low Power Mobile Memory 2. **Capacity**: 32Gbit = Single Chip **4GB** 3. **Bus Width**: x32bit 4. **Speed**: 4266Mbps 5. **Voltage**: 0.6V / 1.1V / 1.8V Triple Voltage Supply, Ultra-Low Power Consumption 6. **Temperature**: -25℃ ~ 85℃ 7. **Package**: FBGA200 8. **Applications**: Mobile RAM, Tablets, High-End IoT Devices, Smart Wearables, Industrial Embedded Motherboards

KLMCG1RCTE-B041

KLMCG1RCTE-B041

- Capacity: **64GB eMMC 5.1** - Bus Mode: HS400 High Speed - Supply Voltage: Core 1.8V / Flash 3.3V - Operating Temperature: Industrial Wide Temperature **-25℃ ~ 85℃** - Flash Type: 3D TLC NAND, approximately 3000 P/E write cycles - Read/Write Performance: Sequential Read ≈330MB/s, Sequential Write ≈150MB/s

KLMBG1UCTC-B041

KLMBG1UCTC-B041

- Model: **KLMBG1UCTC-B041** - Type: Samsung eMMC 5.1 Embedded Flash - Capacity: **32GB** - Interface: HS400 High-Speed Bus - Voltage: Core 1.8V / VCC 3.3V - Temperature Grade: Industrial Wide Temperature **-25℃ ~ 85℃** - Flash Type: 3D TLC NAND, approximately 3000 P/E erase cycles - Read/Write Performance: Sequential Read ≈ 330MB/s, Sequential Write ≈ 110MB/s

K4UBE3D4AB-MGCL

K4UBE3D4AB-MGCL

Samsung 32Gb (4GB) LPDDR4X, speed 4266Mbps

KLMAG1JETD-B041

KLMAG1JETD-B041

- Type: Samsung eMMC 5.1 Embedded Flash Memory - Capacity: **16GB** - Package: FBGA-153 (153-ball BGA) - Interface: HS400 High-Speed Mode - Voltage: 1.8V / 3.3V - Temperature Range: -25℃ ~ 85℃ Wide Temperature Industrial Grade - Read/Write: Sequential read approximately 330MB/s, write approximately 50MB/s

KLM8G1GETF-B041

KLM8G1GETF-B041

Type: eMMC 5.1 Capacity: 8GB Package: FBGA-153, Size 11.5×13×0.8mm Mode: Supports HS400 Voltage: VDD 2.7~3.3V / VCCQ 1.8V/3.3V

K4AAG165WA-BCTD

K4AAG165WA-BCTD

Type: DDR4 SDRAM Capacity: 16Gbit (2GB), 1G×16bit Speed: 2666Mbps Voltage: 1.2V

K4A8G165WC-BCWE

K4A8G165WC-BCWE

Type: DDR4 SDRAM Capacity: 8Gbit (1GB), 512M × 16bit Speed: 3200Mbps (PC4-25600) Voltage: 1.2V

K4AAG165WC-BCWE

K4AAG165WC-BCWE

- Type: Samsung DDR4 x16 bit-width DRAM - Capacity: 16Gb = 2GB per chip - Speed: DDR4 3200Mbps

KLM4G1FETE-B041

KLM4G1FETE-B041

- Model: KLM4G1FETE-B041 - Specs: **4GB eMMC 5.1**, HS400 high-speed mode - Package: FBGA153, size 11×10×0.8mm - Voltage: 1.8V / 3.3V - Temp Range: -25℃ ~ 85℃ industrial wide temperature - Use: Storage for old Android phone fonts, cameras, set-top boxes, industrial control boards, routers

KM4X60002M-B321

KM4X60002M-B321

封装：**254 FBGA** 存储：**32GB eMMC 5.1** 内存：**24Gb LPDDR4X（等效 3GB）** DRAM 速率：**4266 Mbps** 状态：量产 Active，RoHS 无铅

M321RYGA0PB2-CCP

M321RYGA0PB2-CCP

-* * Model * *: DDR5 RDIMM (Server Registered Memory with ECC Error Correction)

KLMDG2RCTE‑B041

KLMDG2RCTE‑B041

M321RAJA0MB2-CCP

M321RAJA0MB2-CCP

- Capacity: 128GB DDR5 RDIMM (Registered ECC hardware error correction) - Frequency: 6400Mbps (PC5-51200), CL52 timing - Architecture: 2Rank ×4 (2Rx4) - Operating Voltage: 1.1V low-voltage energy-saving - Module Composition: (8G×4) ×40 DRAM chips - Pins: 288-Pin Server DIMM - Stability: Supports 2DPC per channel, 24/7 continuous operation in data center

MDRRWM4QDBC2-3G000

MDRRWM4QDBC2-3G000

1. Capacity: 96GB DDR5 RDIMM (REG register, ECC hardware error correction) 2. Frequency: 6400Mbps (PC5-51200), Voltage: 1.1V 3. Architecture: 2Rank ×4 (2Rx4) 4. Pins: 288Pin Server DIMM 5. DRAM Composition: (6G×4)×40 DRAM chips 6. Features: Supports 2DPC (two DIMMs per channel), hardware data error detection and correction, stable 24/7 operation in server environment

M321R8GA0EB2-CCPWF

M321R8GA0EB2-CCPWF

- Capacity: 64GB - Type: DDR5 ECC RDIMM (Registered Error-Correcting Memory) - Frequency: 6400Mbps (PC5-51200), CL52 timing - Architecture: 2Rank ×4 (2Rx4) - Voltage: 1.1V Low Voltage - Pins: 288-Pin Server DIMM

MZTL67T6HBLC-00AW7

MZTL67T6HBLC-00AW7

- Interface: PCIe 5.0 x4 NVMe 2.0 - Form Factor: E1.S 9.5mm thick high-density blade SSD - Capacity: 7.68TB TLC enterprise-grade SSD - Top Performance: Sequential read: 12,000 MB/s, sequential write: 6,800 MB/s Random read: 2 million IOPS, random write: 400,000 IOPS - Endurance: 1 DWPD, 5-year warranty, with PLP hardware power loss protection - MTBF: 2.5 million hours, designed for 24/7 data center operation

MZTL63T8HFLT-00AW7

MZTL63T8HFLT-00AW7

1. **Interface Protocol**: PCIe 5.0 x4 NVMe 2.0 2. **Performance** - Sequential Read: 12,000 MB/s - Sequential Write: 6,800 MB/s - Random Read: 1.7 million IOPS, Random Write: 250,000 IOPS 3. **Endurance**: 1 DWPD, 5-year enterprise-grade write lifespan with PLP power-loss protection 4. **Flash**: Samsung next-gen V-NAND TLC, data center-optimized firmware

MZQL27T6HBLA-00A07

MZQL27T6HBLA-00A07

1. **Series**: Samsung PM9A3 Enterprise Read-Intensive SSD 2. **Specs**: 2.5-inch 7mm thick U.2 (SFF-8639), PCIe 4.0 x4 NVMe 1.4 protocol 3. **Flash**: Samsung 6th Gen V-NAND TLC with PLP hardware power-loss protection 4. **Endurance**: Total writes 14,016 TBW 5. **Performance**: Sequential read 6,800 MB/s, sequential write 4,000 MB/s, random read 1 million IOPS

MZQL23T8HCLS-00A07

MZQL23T8HCLS-00A07

Spec: PM9A3 Enterprise, 2.5-inch U.2 (SFF-8639), PCIe 4.0 NVMe, 3.84TB TLC SSD

K3KL5L50EA-BGCU

K3KL5L50EA-BGCU

- Specification: LPDDR5X DRAM, 128Gbit = single chip **16GB** - Bus Width: x64bit - Speed: Full-speed 8533Mbps high-frequency version - Power Supply: Four-level low voltage of 1.8V / 1.05V / 0.9V / 0.5V - Temperature Range: -25℃ ~ 85℃, Commercial Grade

K3KL5L50CM-BGCW

K3KL5L50CM-BGCW

- Type: Samsung LPDDR5X Ultra-Low-Power Mobile DRAM - Capacity: 128 Gbit = **16GB per chip** - Bus Width: x64bit - Speed: 8533 Mbps High-Frequency Version - Power Supply: Four-level Low Voltage 1.8V / 1.05V / 0.9V / 0.5V - Operating Temperature: -25℃ ~ 85℃ Commercial Grade - Package: FBGA496 - Flash Die: Fifth-generation V-NAND architecture, power-optimized version

K3KL4L40EM-BGCU

K3KL4L40EM-BGCU

- **Model**: Samsung LPDDR5X Ultra-Low Power Mobile DRAM - **Capacity**: 96 Gbit = **12GB per chip** - **Bus Width**: x64bit - **Speed**: 8533 Mbps (commonly referred to in the industry as 8553 Mbps high-frequency version) - **Operating Voltage**: Four low-voltage levels: 1.8V / 1.05V / 0.9V / 0.5V - **Operating Temperature**: -25℃ ~ 85℃ (Commercial Grade) - **Package**: FBGA-496 - **Typical Applications**: Memory expansion for Snapdragon 8 Gen1/Gen2, Dimensity 9000/9200 mobile CPUs, tablets, high-end handheld consoles, and AI computing terminals

K4UHE3S4AA-MGCL

K4UHE3S4AA-MGCL

1. **Type**: Samsung LPDDR4X Low Power Mobile Memory 2. **Capacity**: 32Gbit = Single Chip **4GB** 3. **Bus Width**: x32bit 4. **Speed**: 4266Mbps 5. **Voltage**: 0.6V / 1.1V / 1.8V Triple Voltage Supply, Ultra-Low Power Consumption 6. **Temperature**: -25℃ ~ 85℃ 7. **Package**: FBGA200 8. **Applications**: Mobile RAM, Tablets, High-End IoT Devices, Smart Wearables, Industrial Embedded Motherboards

KLMCG1RCTE-B041

KLMCG1RCTE-B041

- Capacity: **64GB eMMC 5.1** - Bus Mode: HS400 High Speed - Supply Voltage: Core 1.8V / Flash 3.3V - Operating Temperature: Industrial Wide Temperature **-25℃ ~ 85℃** - Flash Type: 3D TLC NAND, approximately 3000 P/E write cycles - Read/Write Performance: Sequential Read ≈330MB/s, Sequential Write ≈150MB/s

KLMBG1UCTC-B041

KLMBG1UCTC-B041

- Model: **KLMBG1UCTC-B041** - Type: Samsung eMMC 5.1 Embedded Flash - Capacity: **32GB** - Interface: HS400 High-Speed Bus - Voltage: Core 1.8V / VCC 3.3V - Temperature Grade: Industrial Wide Temperature **-25℃ ~ 85℃** - Flash Type: 3D TLC NAND, approximately 3000 P/E erase cycles - Read/Write Performance: Sequential Read ≈ 330MB/s, Sequential Write ≈ 110MB/s

K4UBE3D4AB-MGCL

K4UBE3D4AB-MGCL

Samsung 32Gb (4GB) LPDDR4X, speed 4266Mbps

KLMAG1JETD-B041

KLMAG1JETD-B041

- Type: Samsung eMMC 5.1 Embedded Flash Memory - Capacity: **16GB** - Package: FBGA-153 (153-ball BGA) - Interface: HS400 High-Speed Mode - Voltage: 1.8V / 3.3V - Temperature Range: -25℃ ~ 85℃ Wide Temperature Industrial Grade - Read/Write: Sequential read approximately 330MB/s, write approximately 50MB/s

KLM8G1GETF-B041

KLM8G1GETF-B041

Type: eMMC 5.1 Capacity: 8GB Package: FBGA-153, Size 11.5×13×0.8mm Mode: Supports HS400 Voltage: VDD 2.7~3.3V / VCCQ 1.8V/3.3V

K4AAG165WA-BCTD

K4AAG165WA-BCTD

Type: DDR4 SDRAM Capacity: 16Gbit (2GB), 1G×16bit Speed: 2666Mbps Voltage: 1.2V

K4A8G165WC-BCWE

K4A8G165WC-BCWE

Type: DDR4 SDRAM Capacity: 8Gbit (1GB), 512M × 16bit Speed: 3200Mbps (PC4-25600) Voltage: 1.2V

K4AAG165WC-BCWE

K4AAG165WC-BCWE

- Type: Samsung DDR4 x16 bit-width DRAM - Capacity: 16Gb = 2GB per chip - Speed: DDR4 3200Mbps

KLM4G1FETE-B041

KLM4G1FETE-B041

- Model: KLM4G1FETE-B041 - Specs: **4GB eMMC 5.1**, HS400 high-speed mode - Package: FBGA153, size 11×10×0.8mm - Voltage: 1.8V / 3.3V - Temp Range: -25℃ ~ 85℃ industrial wide temperature - Use: Storage for old Android phone fonts, cameras, set-top boxes, industrial control boards, routers

Latest News

Follow industry trends, get the latest in memory technology

新闻配图

Samsung releases new official prices

›

DRAM September News

›

Samsung Official Price News

›

Recently, top domestic terminal manufacturers have finalized a three-year long-term locked price supply contract for DRAM with Nanya. The contract sets a minimum supply price and no price limit for price increases.

›

DRAM August News

›

The consolidation of the storage industry is intensifying, and distribution channel resources are concentrating on top enterprises

›

IoT device shipments continue to grow, driving up demand for low capacity NOR Flash

›

DDR5 has a PC market penetration rate exceeding 60%, accelerating the replacement of DDR4

›

Samsung releases new generation of automotive grade UFS 4.0, doubling sequential read speed

›

In the first half of 2026, global semiconductor sales increased year-on-year, with the storage sector contributing the most

›

The rise of edge AI applications and the evolution of end-to-end storage towards large capacity and low power consumption

›

EMMC 5.1 remains the mainstream solution for mid-range embedded devices, maintaining a balance between supply and demand

›

Samsung signs long-term LPDDR supply agreements with multiple leading car companies

›

Update of export control for semiconductor equipment, acceleration of domestic storage industry chain's localization process

›

The EU Carbon Border Adjustment Mechanism has been officially implemented, and the electronic component supply chain is facing a green transformation

›

The original factory production reduction strategy for storage is effective, and the contract price of NAND flash memory has stopped falling and rebounded

›

LPDDR5X accelerates popularity on mobile devices, reducing standby power consumption by approximately 20%

›

AI servers drive enterprise level SSD demand, UFS 4.0 becomes standard on flagship phones

›

Samsung Xi'an NAND Flash Memory Factory Completed 9th Generation V-NAND Production Line Upgrade

›

High bandwidth memory HBM demand erupts, Samsung accelerates HBM3E production capacity deployment

›

DRAM September News

›

Samsung Official Price News

›

Recently, top domestic terminal manufacturers have finalized a three-year long-term locked price supply contract for DRAM with Nanya. The contract sets a minimum supply price and no price limit for price increases.

›

DRAM August News

›

The consolidation of the storage industry is intensifying, and distribution channel resources are concentrating on top enterprises

›

IoT device shipments continue to grow, driving up demand for low capacity NOR Flash

›

DDR5 has a PC market penetration rate exceeding 60%, accelerating the replacement of DDR4

›

Samsung releases new generation of automotive grade UFS 4.0, doubling sequential read speed

›

In the first half of 2026, global semiconductor sales increased year-on-year, with the storage sector contributing the most

›

The rise of edge AI applications and the evolution of end-to-end storage towards large capacity and low power consumption

›

EMMC 5.1 remains the mainstream solution for mid-range embedded devices, maintaining a balance between supply and demand

›

Samsung signs long-term LPDDR supply agreements with multiple leading car companies

›

Update of export control for semiconductor equipment, acceleration of domestic storage industry chain's localization process

›

The EU Carbon Border Adjustment Mechanism has been officially implemented, and the electronic component supply chain is facing a green transformation

›

The original factory production reduction strategy for storage is effective, and the contract price of NAND flash memory has stopped falling and rebounded

›

LPDDR5X accelerates popularity on mobile devices, reducing standby power consumption by approximately 20%

›

AI servers drive enterprise level SSD demand, UFS 4.0 becomes standard on flagship phones

›

Samsung Xi'an NAND Flash Memory Factory Completed 9th Generation V-NAND Production Line Upgrade

›

High bandwidth memory HBM demand erupts, Samsung accelerates HBM3E production capacity deployment

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