Product List

封装：**254 FBGA** 存储：**32GB eMMC 5.1** 内存：**24Gb LPDDR4X（等效 3GB）** DRAM 速率：**4266 Mbps** 状态：量产 Active，RoHS 无铅

-* * Model * *: DDR5 RDIMM (Server Registered Memory with ECC Error Correction)

emmc

- Capacity: 128GB DDR5 RDIMM (Registered ECC hardware error correction) - Frequency: 6400Mbps (PC5-51200), CL52 timing - Architecture: 2Rank ×4 (2Rx4) - Operating Voltage: 1.1V low-voltage energy-saving - Module Composition: (8G×4) ×40 DRAM chips - Pins: 288-Pin Server DIMM - Stability: Supports 2DPC per channel, 24/7 continuous operation in data center

1. Capacity: 96GB DDR5 RDIMM (REG register, ECC hardware error correction) 2. Frequency: 6400Mbps (PC5-51200), Voltage: 1.1V 3. Architecture: 2Rank ×4 (2Rx4) 4. Pins: 288Pin Server DIMM 5. DRAM Composition: (6G×4)×40 DRAM chips 6. Features: Supports 2DPC (two DIMMs per channel), hardware data error detection and correction, stable 24/7 operation in server environment

- Capacity: 64GB - Type: DDR5 ECC RDIMM (Registered Error-Correcting Memory) - Frequency: 6400Mbps (PC5-51200), CL52 timing - Architecture: 2Rank ×4 (2Rx4) - Voltage: 1.1V Low Voltage - Pins: 288-Pin Server DIMM

- Interface: PCIe 5.0 x4 NVMe 2.0 - Form Factor: E1.S 9.5mm thick high-density blade SSD - Capacity: 7.68TB TLC enterprise-grade SSD - Top Performance: Sequential read: 12,000 MB/s, sequential write: 6,800 MB/s Random read: 2 million IOPS, random write: 400,000 IOPS - Endurance: 1 DWPD, 5-year warranty, with PLP hardware power loss protection - MTBF: 2.5 million hours, designed for 24/7 data center operation

1. **Interface Protocol**: PCIe 5.0 x4 NVMe 2.0 2. **Performance** - Sequential Read: 12,000 MB/s - Sequential Write: 6,800 MB/s - Random Read: 1.7 million IOPS, Random Write: 250,000 IOPS 3. **Endurance**: 1 DWPD, 5-year enterprise-grade write lifespan with PLP power-loss protection 4. **Flash**: Samsung next-gen V-NAND TLC, data center-optimized firmware

1. **Series**: Samsung PM9A3 Enterprise Read-Intensive SSD 2. **Specs**: 2.5-inch 7mm thick U.2 (SFF-8639), PCIe 4.0 x4 NVMe 1.4 protocol 3. **Flash**: Samsung 6th Gen V-NAND TLC with PLP hardware power-loss protection 4. **Endurance**: Total writes 14,016 TBW 5. **Performance**: Sequential read 6,800 MB/s, sequential write 4,000 MB/s, random read 1 million IOPS

Spec: PM9A3 Enterprise, 2.5-inch U.2 (SFF-8639), PCIe 4.0 NVMe, 3.84TB TLC SSD

- Specification: LPDDR5X DRAM, 128Gbit = single chip **16GB** - Bus Width: x64bit - Speed: Full-speed 8533Mbps high-frequency version - Power Supply: Four-level low voltage of 1.8V / 1.05V / 0.9V / 0.5V - Temperature Range: -25℃ ~ 85℃, Commercial Grade

- Type: Samsung LPDDR5X Ultra-Low-Power Mobile DRAM - Capacity: 128 Gbit = **16GB per chip** - Bus Width: x64bit - Speed: 8533 Mbps High-Frequency Version - Power Supply: Four-level Low Voltage 1.8V / 1.05V / 0.9V / 0.5V - Operating Temperature: -25℃ ~ 85℃ Commercial Grade - Package: FBGA496 - Flash Die: Fifth-generation V-NAND architecture, power-optimized version

- **Model**: Samsung LPDDR5X Ultra-Low Power Mobile DRAM - **Capacity**: 96 Gbit = **12GB per chip** - **Bus Width**: x64bit - **Speed**: 8533 Mbps (commonly referred to in the industry as 8553 Mbps high-frequency version) - **Operating Voltage**: Four low-voltage levels: 1.8V / 1.05V / 0.9V / 0.5V - **Operating Temperature**: -25℃ ~ 85℃ (Commercial Grade) - **Package**: FBGA-496 - **Typical Applications**: Memory expansion for Snapdragon 8 Gen1/Gen2, Dimensity 9000/9200 mobile CPUs, tablets, high-end handheld consoles, and AI computing terminals

1. **Type**: Samsung LPDDR4X Low Power Mobile Memory 2. **Capacity**: 32Gbit = Single Chip **4GB** 3. **Bus Width**: x32bit 4. **Speed**: 4266Mbps 5. **Voltage**: 0.6V / 1.1V / 1.8V Triple Voltage Supply, Ultra-Low Power Consumption 6. **Temperature**: -25℃ ~ 85℃ 7. **Package**: FBGA200 8. **Applications**: Mobile RAM, Tablets, High-End IoT Devices, Smart Wearables, Industrial Embedded Motherboards

- Capacity: **64GB eMMC 5.1** - Bus Mode: HS400 High Speed - Supply Voltage: Core 1.8V / Flash 3.3V - Operating Temperature: Industrial Wide Temperature **-25℃ ~ 85℃** - Flash Type: 3D TLC NAND, approximately 3000 P/E write cycles - Read/Write Performance: Sequential Read ≈330MB/s, Sequential Write ≈150MB/s

- Model: **KLMBG1UCTC-B041** - Type: Samsung eMMC 5.1 Embedded Flash - Capacity: **32GB** - Interface: HS400 High-Speed Bus - Voltage: Core 1.8V / VCC 3.3V - Temperature Grade: Industrial Wide Temperature **-25℃ ~ 85℃** - Flash Type: 3D TLC NAND, approximately 3000 P/E erase cycles - Read/Write Performance: Sequential Read ≈ 330MB/s, Sequential Write ≈ 110MB/s

Samsung 32Gb (4GB) LPDDR4X, speed 4266Mbps

- Type: Samsung eMMC 5.1 Embedded Flash Memory - Capacity: **16GB** - Package: FBGA-153 (153-ball BGA) - Interface: HS400 High-Speed Mode - Voltage: 1.8V / 3.3V - Temperature Range: -25℃ ~ 85℃ Wide Temperature Industrial Grade - Read/Write: Sequential read approximately 330MB/s, write approximately 50MB/s

Type: eMMC 5.1 Capacity: 8GB Package: FBGA-153, Size 11.5×13×0.8mm Mode: Supports HS400 Voltage: VDD 2.7~3.3V / VCCQ 1.8V/3.3V

Type: DDR4 SDRAM Capacity: 16Gbit (2GB), 1G×16bit Speed: 2666Mbps Voltage: 1.2V

Type: DDR4 SDRAM Capacity: 8Gbit (1GB), 512M × 16bit Speed: 3200Mbps (PC4-25600) Voltage: 1.2V

- Type: Samsung DDR4 x16 bit-width DRAM - Capacity: 16Gb = 2GB per chip - Speed: DDR4 3200Mbps

- Model: KLM4G1FETE-B041 - Specs: **4GB eMMC 5.1**, HS400 high-speed mode - Package: FBGA153, size 11×10×0.8mm - Voltage: 1.8V / 3.3V - Temp Range: -25℃ ~ 85℃ industrial wide temperature - Use: Storage for old Android phone fonts, cameras, set-top boxes, industrial control boards, routers