Product List

封装：**254 FBGA** 存储：**32GB eMMC 5.1** 内存：**24Gb LPDDR4X（等效 3GB）** DRAM 速率：**4266 Mbps** 状态：量产 Active，RoHS 无铅

- Specification: LPDDR5X DRAM, 128Gbit = single chip **16GB** - Bus Width: x64bit - Speed: Full-speed 8533Mbps high-frequency version - Power Supply: Four-level low voltage of 1.8V / 1.05V / 0.9V / 0.5V - Temperature Range: -25℃ ~ 85℃, Commercial Grade

- Type: Samsung LPDDR5X Ultra-Low-Power Mobile DRAM - Capacity: 128 Gbit = **16GB per chip** - Bus Width: x64bit - Speed: 8533 Mbps High-Frequency Version - Power Supply: Four-level Low Voltage 1.8V / 1.05V / 0.9V / 0.5V - Operating Temperature: -25℃ ~ 85℃ Commercial Grade - Package: FBGA496 - Flash Die: Fifth-generation V-NAND architecture, power-optimized version

- **Model**: Samsung LPDDR5X Ultra-Low Power Mobile DRAM - **Capacity**: 96 Gbit = **12GB per chip** - **Bus Width**: x64bit - **Speed**: 8533 Mbps (commonly referred to in the industry as 8553 Mbps high-frequency version) - **Operating Voltage**: Four low-voltage levels: 1.8V / 1.05V / 0.9V / 0.5V - **Operating Temperature**: -25℃ ~ 85℃ (Commercial Grade) - **Package**: FBGA-496 - **Typical Applications**: Memory expansion for Snapdragon 8 Gen1/Gen2, Dimensity 9000/9200 mobile CPUs, tablets, high-end handheld consoles, and AI computing terminals

1. **Type**: Samsung LPDDR4X Low Power Mobile Memory 2. **Capacity**: 32Gbit = Single Chip **4GB** 3. **Bus Width**: x32bit 4. **Speed**: 4266Mbps 5. **Voltage**: 0.6V / 1.1V / 1.8V Triple Voltage Supply, Ultra-Low Power Consumption 6. **Temperature**: -25℃ ~ 85℃ 7. **Package**: FBGA200 8. **Applications**: Mobile RAM, Tablets, High-End IoT Devices, Smart Wearables, Industrial Embedded Motherboards

Samsung 32Gb (4GB) LPDDR4X, speed 4266Mbps