Jieke (Asia) Co., Ltd Jieke (Asia) Co., Ltd Jieke (Asia) Co., Ltd
Global Electronic Components Distribution · Since 2007

Global professional agency and distribution of electronic components

Jieke (Asia) is a professional distributor of electronic components based in Hong Kong and serving the global market. It represents Samsung's international first-line storage brand and specializes in DRAM, eMMC, consumer grade storage and other products, serving the automotive, IoT, drone and smart life markets.

Over 17 years in the semiconductor industry · Serving automotive, IoT, drone and more markets

Global professional agency and distribution of electronic components

Our Services

Focused on global electronic components distribution · Professional memory device solutions

Jieke (Asia) Co., Ltd., formerly known as Jieke Communication Technology Co., Ltd., was founded in Shenzhen and Hong Kong in 2007, specializing in the distribution of global electronic components. We act as an agent for Samsung's international first-line storage brand, specializing in dynamic random access memory (DRAM), embedded storage (eMMC), consumer grade storage, and other products widely used in markets such as automotive, IoT, drones, and smart living.
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A B C D Craftsmanship Innovation Quality Focus After-sales Care

Three Key Advantages

Quality Assurance · Professional Channels · 100% In Stock, creating the best value for you

Quality Assurance

Top-tier brand memory chips / Stable supply · Genuine guaranteed

Professional Channels

Best price channel / Shortest lead time, creating the best value

100% In Stock

Sufficient stock / Fast shipment upon order

Brand Partners

Distributing top international memory brands

Milestones

From Huaqiangbei to a global footprint, 17 years of expertise

2007

Jieke Communication Technology founded

Based in Shenzhen Huaqiangbei, serving domestic phone, USB and mobile storage customers

2015

Jieke (Asia) registered in Hong Kong

Headquarters in Hong Kong, with branches in Shenzhen and Suzhou

Present

17+ Years of Industry Experience

Deep in semiconductors, bridging global suppliers and customers

Global Presence

Hong Kong HQ coordinates, Shenzhen-Suzhou branches work in synergy

Group HQ

Hong Kong HQ

Located in the Hong Kong SAR, coordinating global business and brand partnerships

Source Base

Shenzhen Branch

Based in Huaqiangbei electronics hub, close to manufacturing and supply sources

East China Hub

Suzhou Branch

Serving East China customers with fast regional response

Application Markets

Memory devices empowering diverse smart terminals

01

Network Play Box

02

Mobile and PC

03

AI

04

car

05

Game

06

Internet of Things

07

drone

08

Smart Life

Service Philosophy

Integrity, punctuality, thinking what customers think

Original Sourcing · Quality First

Original Sourcing, Quality First

Adhering to first-tier original channels with full-chain quality traceability, ensuring every memory chip is genuine and reliable.

Global Layout · Efficient Delivery

Global Layout, Efficient Delivery

Multi-point warehousing network with ample stock, ensuring stable cross-border delivery.

Deep Expertise · Tailored Support

Deep Expertise, Tailored Support

Focusing on memory semiconductors, providing tailored selection plans for different industry scenarios.

Integrity Partnership · Sustainable Win-win

Integrity Partnership, Sustainable Win-win

Customer value at the core, building a transparent collaboration system for long-term industry growth.

Product Center

Covering DRAM, memory cards, flash ICs, eMMC and other memory devices

M321RAJA0MB2-CCP
M321RAJA0MB2-CCP
- 容量:128GB DDR5 RDIMM(REG 寄存器 + ECC 硬件纠错) - 频率:6400Mbps(PC5-51200),CL52 时序 - 架构:2Rank ×4(2Rx4) - 工作电压:1.1V 低压节能 - 颗粒构成:(8G×4)×40 颗 DRAM 芯片 - 针脚:288Pin 服务器 DIMM - 稳定性:支持 2DPC 每通道、7×24 小时机房不间断运行
MDRRWM4QDBC2-3G000
MDRRWM4QDBC2-3G000
1. 容量:96GB DDR5 RDIMM(REG 寄存器 + ECC 硬件纠错) 2. 频率:6400Mbps(PC5-51200),电压 1.1V 3. 架构:2Rank ×4(2Rx4) 4. 针脚:288Pin 服务器 DIMM 5. 颗粒组成:(6G×4)×40 颗 DRAM 芯片 6. 特性:支持 2DPC 双条每通道、硬件数据检错纠错,7×24 小时机房稳定运行
M321R8GA0EB2-CCPWF
M321R8GA0EB2-CCPWF
- 容量:64GB - 类型:DDR5 ECC RDIMM(REG 寄存器纠错内存) - 频率:6400Mbps(PC5-51200),CL52 时序 - 架构:2Rank ×4(2Rx4) - 电压:1.1V 低电压 - 针脚:288Pin 服务器 DIMM
MZTL67T6HBLC-00AW7
MZTL67T6HBLC-00AW7
- 接口:PCIe 5.0 x4 NVMe 2.0 - 形态:E1.S 9.5mm 厚度高密度刀片盘 - 容量:7.68TB TLC 企业级固态 - 极限性能: 顺序读取 12000MB/s、顺序写入 6800MB/s 随机读 200 万 IOPS、随机写 40 万 IOPS - 耐久:1 DWPD 5 年质保,搭载 PLP 硬件掉电保护 - MTBF:250 万小时,数据中心 7×24 小时不间断运行
MZTL63T8HFLT-00AW7
MZTL63T8HFLT-00AW7
1. **接口协议**:PCIe 5.0 x4 NVMe 2.0 2. **性能** - 顺序读取:12000 MB/s - 顺序写入:6800 MB/s - 随机读:170 万 IOPS,随机写:25 万 IOPS 3. **耐久**:1 DWPD 5 年企业级写入寿命,带 PLP 掉电保护 4. **闪存**:三星新一代 V-NAND TLC,数据中心优化固件
MZQL27T6HBLA-00A07
MZQL27T6HBLA-00A07
1. **系列**:Samsung PM9A3 企业级读密集型 SSD 2. **规格**:2.5 英寸 7mm 厚度 U.2 (SFF-8639)、PCIe4.0 x4 NVMe 1.4 协议 3. **闪存**:三星第六代 V-NAND TLC,带 PLP 硬件掉电保护 4. **耐久**:总写入量 14016TBW 5. **性能**:顺序读取 6800MB/s、顺序写入 4000MB/s,随机读 100 万 IOPS
MZQL23T8HCLS-00A07
MZQL23T8HCLS-00A07
规格:PM9A3 企业级、2.5 英寸 U.2(SFF-8639)、PCIe4.0 NVMe、3.84TB TLC 固态
K3KL5L50EA-BGCU
K3KL5L50EA-BGCU
- 规格:LPDDR5X DRAM,128Gbit = 单颗**16GB** - 位宽:x64bit - 速率:满血 8533Mbps 高频版 - 供电:1.8V / 1.05V / 0.9V / 0.5V 四档低压 - 温区:-25℃ ~ +85℃ 商业级
K3KL5L50CM-BGCW
K3KL5L50CM-BGCW
- 类型:Samsung LPDDR5X 超低功耗移动 DRAM - 容量:128Gbit = **单颗 16GB** - 位宽:x64bit - 速率:8533 Mbps 高频版 - 供电:四档低压 1.8V / 1.05V / 0.9V / 0.5V - 工作温度:-25℃ ~ +85℃ 商业级 - 封装:FBGA496 - 闪存 Die:第五代 V-NAND 架构,功耗优化版
K3KL4L40EM-BGCU
K3KL4L40EM-BGCU
- **型**:Samsung LPDDR5X 超低功耗移动 DRAM - **容量**:96Gbit = **单颗 12GB** - **位宽**:x64bit - **速率**:8533 Mbps(行业俗称 8553Mbps 高频版) - **供电电压**:1.8V / 1.05V / 0.9V / 0.5V 四档低压 - **工作温度**:-25℃ ~ +85℃ 商业级 - **封装**:FBGA-496 - **典型用途**:骁龙 8 Gen1/Gen2、天玑 9000/9200 手机 CPU 上盖运存、平板、高端掌机、AI 算力终端内存扩容
K4UHE3S4AA-MGCL
K4UHE3S4AA-MGCL
1. **类型**:Samsung LPDDR4X 低功耗移动内存 2. **容量**:32Gbit = 单颗 **4GB** 3. **位宽**:x32bit 4. **速率**:4266Mbps 5. **电压**:0.6V / 1.1V / 1.8V 三电压供电,超低功耗 6. **温度**:-25℃ ~ +85℃ 7. **封装**:FBGA200 8. **用途**:手机运存、平板、高端 IoT 设备、智能穿戴、工控嵌入式主板
KLMCG1RCTE-B041
KLMCG1RCTE-B041
- 容量:**64GB eMMC 5.1** - 总线模式:HS400 高速 - 供电电压:内核 1.8V / 闪存 3.3V - 工作温度:工业宽温 **-25℃ ~ +85℃** - 闪存类型:3D TLC NAND,约 3000 次 P/E 擦写寿命 - 读写性能:顺序读取≈330MB/s,顺序写入≈150MB/s
KLMBG1UCTC-B041
KLMBG1UCTC-B041
- 型号:**KLMBG1UCTC-B041** - 类型:Samsung eMMC 5.1 嵌入式闪存 - 容量:**32GB** - 接口:HS400 高速总线 - 电压:核心 1.8V / VCC 3.3V - 温度等级:工业宽温 **-25℃ ~ +85℃** - 闪存类型:3D TLC NAND,约 3000 次 P/E 擦写寿命 - 读写性能:顺序读≈330MB/s,顺序写≈110MB/s
K4UBE3D4AB-MGCL
K4UBE3D4AB-MGCL
三星 32Gb (4GB) LPDDR4X,速率 4266Mbps
KLMAG1JETD-B041
KLMAG1JETD-B041
- 类型:Samsung eMMC 5.1 嵌入式闪存 - 容量:**16GB** - 封装:FBGA-153(153 球 BGA) - 接口:HS400 高速模式 - 电压:1.8V / 3.3V - 温区:-25℃ ~ 85℃ 宽温工业级 - 读写:顺序读约 330MB/s,写约 50MB/s
KLM8G1GETF-B041
KLM8G1GETF-B041
类型:eMMC 5.1 容量:8GB 封装:FBGA-153,尺寸 11.5×13×0.8mm 模式:支持 HS400 电压:VDD 2.7~3.3V / VCCQ 1.8V/3.3V
K4AAG165WA-BCTD
K4AAG165WA-BCTD
类型:DDR4 SDRAM 容量:16Gbit(2GB),1G×16bit 速率:2666Mbps 电压:1.2V
K4A8G165WC-BCWE
K4A8G165WC-BCWE
类型:DDR4 SDRAM 容量:8Gbit(1GB),512M × 16bit 速率:3200Mbps(PC4-25600) 电压:1.2V
K4AAG165WC-BCWE
K4AAG165WC-BCWE
- 类型:三星 DDR4 x16 位宽 DRAM - 容量:16Gb = 单颗 2GB - 速率:DDR4 3200Mbps
KLM4G1FETE-B041
KLM4G1FETE-B041
- 型号:KLM4G1FETE-B041 - 规格:**4GB eMMC 5.1**,HS400 高速模式 - 封装:FBGA153,尺寸 11×10×0.8mm - 电压:1.8V / 3.3V - 温区:-25℃ ~ 85℃ 工业宽温 - 用途:老安卓手机字库、摄像头、机顶盒、工控板、路由器小容量存储
M321RAJA0MB2-CCP
M321RAJA0MB2-CCP
- 容量:128GB DDR5 RDIMM(REG 寄存器 + ECC 硬件纠错) - 频率:6400Mbps(PC5-51200),CL52 时序 - 架构:2Rank ×4(2Rx4) - 工作电压:1.1V 低压节能 - 颗粒构成:(8G×4)×40 颗 DRAM 芯片 - 针脚:288Pin 服务器 DIMM - 稳定性:支持 2DPC 每通道、7×24 小时机房不间断运行
MDRRWM4QDBC2-3G000
MDRRWM4QDBC2-3G000
1. 容量:96GB DDR5 RDIMM(REG 寄存器 + ECC 硬件纠错) 2. 频率:6400Mbps(PC5-51200),电压 1.1V 3. 架构:2Rank ×4(2Rx4) 4. 针脚:288Pin 服务器 DIMM 5. 颗粒组成:(6G×4)×40 颗 DRAM 芯片 6. 特性:支持 2DPC 双条每通道、硬件数据检错纠错,7×24 小时机房稳定运行
M321R8GA0EB2-CCPWF
M321R8GA0EB2-CCPWF
- 容量:64GB - 类型:DDR5 ECC RDIMM(REG 寄存器纠错内存) - 频率:6400Mbps(PC5-51200),CL52 时序 - 架构:2Rank ×4(2Rx4) - 电压:1.1V 低电压 - 针脚:288Pin 服务器 DIMM
MZTL67T6HBLC-00AW7
MZTL67T6HBLC-00AW7
- 接口:PCIe 5.0 x4 NVMe 2.0 - 形态:E1.S 9.5mm 厚度高密度刀片盘 - 容量:7.68TB TLC 企业级固态 - 极限性能: 顺序读取 12000MB/s、顺序写入 6800MB/s 随机读 200 万 IOPS、随机写 40 万 IOPS - 耐久:1 DWPD 5 年质保,搭载 PLP 硬件掉电保护 - MTBF:250 万小时,数据中心 7×24 小时不间断运行
MZTL63T8HFLT-00AW7
MZTL63T8HFLT-00AW7
1. **接口协议**:PCIe 5.0 x4 NVMe 2.0 2. **性能** - 顺序读取:12000 MB/s - 顺序写入:6800 MB/s - 随机读:170 万 IOPS,随机写:25 万 IOPS 3. **耐久**:1 DWPD 5 年企业级写入寿命,带 PLP 掉电保护 4. **闪存**:三星新一代 V-NAND TLC,数据中心优化固件
MZQL27T6HBLA-00A07
MZQL27T6HBLA-00A07
1. **系列**:Samsung PM9A3 企业级读密集型 SSD 2. **规格**:2.5 英寸 7mm 厚度 U.2 (SFF-8639)、PCIe4.0 x4 NVMe 1.4 协议 3. **闪存**:三星第六代 V-NAND TLC,带 PLP 硬件掉电保护 4. **耐久**:总写入量 14016TBW 5. **性能**:顺序读取 6800MB/s、顺序写入 4000MB/s,随机读 100 万 IOPS
MZQL23T8HCLS-00A07
MZQL23T8HCLS-00A07
规格:PM9A3 企业级、2.5 英寸 U.2(SFF-8639)、PCIe4.0 NVMe、3.84TB TLC 固态
K3KL5L50EA-BGCU
K3KL5L50EA-BGCU
- 规格:LPDDR5X DRAM,128Gbit = 单颗**16GB** - 位宽:x64bit - 速率:满血 8533Mbps 高频版 - 供电:1.8V / 1.05V / 0.9V / 0.5V 四档低压 - 温区:-25℃ ~ +85℃ 商业级
K3KL5L50CM-BGCW
K3KL5L50CM-BGCW
- 类型:Samsung LPDDR5X 超低功耗移动 DRAM - 容量:128Gbit = **单颗 16GB** - 位宽:x64bit - 速率:8533 Mbps 高频版 - 供电:四档低压 1.8V / 1.05V / 0.9V / 0.5V - 工作温度:-25℃ ~ +85℃ 商业级 - 封装:FBGA496 - 闪存 Die:第五代 V-NAND 架构,功耗优化版
K3KL4L40EM-BGCU
K3KL4L40EM-BGCU
- **型**:Samsung LPDDR5X 超低功耗移动 DRAM - **容量**:96Gbit = **单颗 12GB** - **位宽**:x64bit - **速率**:8533 Mbps(行业俗称 8553Mbps 高频版) - **供电电压**:1.8V / 1.05V / 0.9V / 0.5V 四档低压 - **工作温度**:-25℃ ~ +85℃ 商业级 - **封装**:FBGA-496 - **典型用途**:骁龙 8 Gen1/Gen2、天玑 9000/9200 手机 CPU 上盖运存、平板、高端掌机、AI 算力终端内存扩容
K4UHE3S4AA-MGCL
K4UHE3S4AA-MGCL
1. **类型**:Samsung LPDDR4X 低功耗移动内存 2. **容量**:32Gbit = 单颗 **4GB** 3. **位宽**:x32bit 4. **速率**:4266Mbps 5. **电压**:0.6V / 1.1V / 1.8V 三电压供电,超低功耗 6. **温度**:-25℃ ~ +85℃ 7. **封装**:FBGA200 8. **用途**:手机运存、平板、高端 IoT 设备、智能穿戴、工控嵌入式主板
KLMCG1RCTE-B041
KLMCG1RCTE-B041
- 容量:**64GB eMMC 5.1** - 总线模式:HS400 高速 - 供电电压:内核 1.8V / 闪存 3.3V - 工作温度:工业宽温 **-25℃ ~ +85℃** - 闪存类型:3D TLC NAND,约 3000 次 P/E 擦写寿命 - 读写性能:顺序读取≈330MB/s,顺序写入≈150MB/s
KLMBG1UCTC-B041
KLMBG1UCTC-B041
- 型号:**KLMBG1UCTC-B041** - 类型:Samsung eMMC 5.1 嵌入式闪存 - 容量:**32GB** - 接口:HS400 高速总线 - 电压:核心 1.8V / VCC 3.3V - 温度等级:工业宽温 **-25℃ ~ +85℃** - 闪存类型:3D TLC NAND,约 3000 次 P/E 擦写寿命 - 读写性能:顺序读≈330MB/s,顺序写≈110MB/s
K4UBE3D4AB-MGCL
K4UBE3D4AB-MGCL
三星 32Gb (4GB) LPDDR4X,速率 4266Mbps
KLMAG1JETD-B041
KLMAG1JETD-B041
- 类型:Samsung eMMC 5.1 嵌入式闪存 - 容量:**16GB** - 封装:FBGA-153(153 球 BGA) - 接口:HS400 高速模式 - 电压:1.8V / 3.3V - 温区:-25℃ ~ 85℃ 宽温工业级 - 读写:顺序读约 330MB/s,写约 50MB/s
KLM8G1GETF-B041
KLM8G1GETF-B041
类型:eMMC 5.1 容量:8GB 封装:FBGA-153,尺寸 11.5×13×0.8mm 模式:支持 HS400 电压:VDD 2.7~3.3V / VCCQ 1.8V/3.3V
K4AAG165WA-BCTD
K4AAG165WA-BCTD
类型:DDR4 SDRAM 容量:16Gbit(2GB),1G×16bit 速率:2666Mbps 电压:1.2V
K4A8G165WC-BCWE
K4A8G165WC-BCWE
类型:DDR4 SDRAM 容量:8Gbit(1GB),512M × 16bit 速率:3200Mbps(PC4-25600) 电压:1.2V
K4AAG165WC-BCWE
K4AAG165WC-BCWE
- 类型:三星 DDR4 x16 位宽 DRAM - 容量:16Gb = 单颗 2GB - 速率:DDR4 3200Mbps
KLM4G1FETE-B041
KLM4G1FETE-B041
- 型号:KLM4G1FETE-B041 - 规格:**4GB eMMC 5.1**,HS400 高速模式 - 封装:FBGA153,尺寸 11×10×0.8mm - 电压:1.8V / 3.3V - 温区:-25℃ ~ 85℃ 工业宽温 - 用途:老安卓手机字库、摄像头、机顶盒、工控板、路由器小容量存储

Latest News

Follow industry trends, get the latest in memory technology

新闻配图
The consolidation of the storage industry is intensifying, and distribution channel resources are concentrating on top enterprises

Jieke makes its debut at the 2026 Munich Shanghai Electronics Show, showcasing Samsung's full range of storage solutions

IoT device shipments continue to grow, driving up demand for low capacity NOR Flash

DDR5 has a PC market penetration rate exceeding 60%, accelerating the replacement of DDR4

Samsung releases new generation of automotive grade UFS 4.0, doubling sequential read speed

Shenzhen Huaqiangbei Electronics Market rebounds, with significant increase in storage chip trading volume

In the first half of 2026, global semiconductor sales increased year-on-year, with the storage sector contributing the most

The rise of edge AI applications and the evolution of end-to-end storage towards large capacity and low power consumption

EMMC 5.1 remains the mainstream solution for mid-range embedded devices, maintaining a balance between supply and demand

Samsung signs long-term LPDDR supply agreements with multiple leading car companies

半导体设备出口管制更新,国产存储产业链加速自主化进程

欧盟碳边境调节机制正式实施,电子元器件供应链迎绿色转型

存储原厂减产策略见效,NAND闪存合约价止跌回升

LPDDR5X在移动端加速普及,待机功耗再降约20%

AI服务器拉动企业级SSD需求,UFS 4.0成旗舰手机标配

三星西安NAND闪存工厂完成第九代V-NAND产线升级

中国新能源汽车渗透率突破50%,车规级存储需求持续激增

高带宽内存HBM需求爆发,三星加速HBM3E产能投放

全球DRAM现货价格连续三个季度上涨,存储行业进入上行周期

三星宣布2026年量产第10代1c纳米DRAM,良率突破关键节点

Jieke makes its debut at the 2026 Munich Shanghai Electronics Show, showcasing Samsung's full range of storage solutions

IoT device shipments continue to grow, driving up demand for low capacity NOR Flash

DDR5 has a PC market penetration rate exceeding 60%, accelerating the replacement of DDR4

Samsung releases new generation of automotive grade UFS 4.0, doubling sequential read speed

Shenzhen Huaqiangbei Electronics Market rebounds, with significant increase in storage chip trading volume

In the first half of 2026, global semiconductor sales increased year-on-year, with the storage sector contributing the most

The rise of edge AI applications and the evolution of end-to-end storage towards large capacity and low power consumption

EMMC 5.1 remains the mainstream solution for mid-range embedded devices, maintaining a balance between supply and demand

Samsung signs long-term LPDDR supply agreements with multiple leading car companies

半导体设备出口管制更新,国产存储产业链加速自主化进程

欧盟碳边境调节机制正式实施,电子元器件供应链迎绿色转型

存储原厂减产策略见效,NAND闪存合约价止跌回升

LPDDR5X在移动端加速普及,待机功耗再降约20%

AI服务器拉动企业级SSD需求,UFS 4.0成旗舰手机标配

三星西安NAND闪存工厂完成第九代V-NAND产线升级

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